2SC5662T2LP
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NPN RF Transistor, 3.2GHz, 50mA, 11V, SOT-723
Дополнительная информация
NPN RF small signal bipolar transistor for S-band applications. Features a 3.2GHz gain bandwidth product and 11V collector-emitter breakdown voltage. Continuous collector current rated at 50mA with a maximum power dissipation of 150mW. Packaged in a SOT-723 surface mount case with copper, tin plating. Operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 56 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-723 |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin |
| DC Rated Voltage | 11V |
| Package Quantity | 8000 |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 3.2GHz |
| Max Breakdown Voltage | 11V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 3.2GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 3V |
| Continuous Collector Current | 50mA |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 11V |
| Collector Emitter Breakdown Voltage | 11V |
| Collector Emitter Saturation Voltage | 500mV |
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