2SC5663T2L
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NPN BJT Transistor, 12V VCEO, 500mA IC, 320MHz fT, SOT-723
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 12V Collector-Emitter Breakdown Voltage (VCEO) and a 500mA Continuous Collector Current (IC). Offers a minimum DC current gain (hFE) of 270 and a transition frequency (fT) of 320MHz. Packaged in a SOT-723 surface-mount case with copper and tin contact plating. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 270 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-723 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin |
| DC Rated Voltage | 12V |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 320MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 320MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 90mV |
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