2SC5706-TL-E
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Краткое описание:
NPN BJT Transistor, 50V, 5A, 400MHz, TO-252
Дополнительная информация
NPN bipolar junction transistor in a TO-252-3 (DPAK) package, designed for high current applications with a maximum collector current of 5A and a collector-emitter breakdown voltage of 50V. Features a low collector-emitter saturation voltage of 160mV, a minimum DC current gain (hFE) of 200, and a transition frequency of 400MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 800mW. Packaged in a 700-piece tape and reel, this RoHS compliant component offers lead-free construction.
| RoHS | Compliant |
| Width | 5.5mm |
| Height | 2.3mm |
| Length | 6.5mm |
| hFE Min | 200 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-252-3 |
| Max Frequency | 1MHz |
| RoHS Compliant | Yes |
| Package Quantity | 700 |
| Radiation Hardening | No |
| Transition Frequency | 400MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 5A |
| Max Power Dissipation | 800mW |
| Gain Bandwidth Product | 400MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 240mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 160mV |
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