2SC5738(TE85L,F)

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2SC5738(TE85L,F) - Toshiba
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Краткое описание: NPN BJT Transistor, 20V, 3.5A, 625mW, SMT, 3-Pin
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage, 3.5A maximum collector current, and 625mW power dissipation. This single-element silicon transistor offers a minimum DC current gain of 400 at 0.5A/2V and 200 at 1.6A/2V. Housed in a 3-pin TSM (SOT) plastic package with gull-wing leads, it operates from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case TSM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.6
Package Family Name SOT
Package Height (mm) 0.7
Package Length (mm) 2.9
Minimum DC Current Gain [email protected]@2V|[email protected]@2V
Max Operating Temperature 150°C
Maximum Power Dissipation 625mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 3.5A
Maximum Emitter Base Voltage 7V
Maximum Collector Base Voltage 40V
Maximum Collector-Emitter Voltage 20V

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