2SC5866TLQ
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 60V VCEO, 2A IC, 200MHz, TSMT3
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a 2A continuous collector current (IC). Offers a maximum power dissipation of 500mW and a transition frequency of 200MHz. Packaged in a TSMT3 (SC) surface-mount case with copper, tin, and silver plating. Operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | NPN |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SC |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 2A |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 200mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
