2SC6026MFV(TL3SONY)

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2SC6026MFV(TL3SONY) - Toshiba
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Краткое описание: NPN BJT 50V 0.15A 150mW SOT-23 (VESM) Surface Mount
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage and 0.15A continuous collector current. This single-element transistor offers a maximum power dissipation of 150mW and a minimum DC current gain of 120. Housed in a compact 3-pin VESM package with flat leads, it measures 1.2mm x 0.8mm with a 0.4mm pin pitch. Operating temperature range is -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Flat
Schedule B 8541210080
Package/Case VESM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.4
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 0.8
Package Family Name SOT
Package Length (mm) 1.2
Minimum DC Current Gain 120@2mA@6V
Seated Plane Height (mm) 0.5
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.15A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 60(Min)MHz
Maximum Collector Base Voltage 60V
Maximum Collector-Emitter Voltage 50V

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