2SD1047
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Краткое описание:
NPN BJT Transistor, 140V VCEO, 12A IC, 100W PD, 20MHz
Дополнительная информация
High power NPN epitaxial planar bipolar transistor designed for through-hole mounting. Features a maximum collector current of 12A and a maximum power dissipation of 100W. Offers a collector-emitter breakdown voltage of 140V and a transition frequency of 20MHz. Operating temperature range spans from -65°C to 150°C. This RoHS compliant component utilizes tin, matte contact plating.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 50 |
| Polarity | NPN |
| Frequency | 20MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 30 |
| Power Dissipation | 100W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 20MHz |
| Max Collector Current | 12A |
| Max Power Dissipation | 100W |
| Gain Bandwidth Product | 20MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector Emitter Breakdown Voltage | 140V |
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