2SD1767T100R
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NPN BJT Transistor, 80V, 700mA, SOT-89, SMD
Дополнительная информация
NPN Silicon Bipolar Junction Transistor, surface mountable in an SOT-89 package. Features a maximum collector current of 700mA and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 120MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-89 |
| Current Rating | 700mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 700mA |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 700mA |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
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