2SD1781KT146Q
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NPN BJT, 32V VCEO, 0.8A IC, 150MHz, SMT3
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 32V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 800mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 150MHz. Packaged in a 3-pin SC-59 (TO-236-3) SMT3 package, supplied on tape and reel. RoHS compliant with a maximum power dissipation of 200mW and an operating temperature up to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | 800mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 32V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 800mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 800mA |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 100mV |
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