2SD1782KT146R
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Краткое описание:
NPN BJT Transistor, 80V, 500mA, 120MHz, SMD
Дополнительная информация
NPN Silicon Bipolar Junction Transistor for surface mount applications. Features 80V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a maximum power dissipation of 200mW and a transition frequency of 120MHz. Packaged in SC-59 with copper, tin, silver plating. Operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1mm |
| Length | 2.9mm |
| hFE Min | 120 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Max Frequency | 100MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
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