2SD1801S-E
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Краткое описание:
NPN BJT Transistor 50V 2A 800mW Through Hole TP
Дополнительная информация
NPN bipolar junction transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 50V and a maximum collector current of 2A. This single-element silicon transistor offers a maximum power dissipation of 800mW and a minimum DC current gain of 140 at 100mA and 2V. The component is housed in a 3-pin plastic package with a tab, measuring 6.5mm in length, 2.3mm in width, and 5.5mm in height, with a pin pitch of 2.3mm. Operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Yes with Exemption |
| Category | Bipolar Power |
| HTS Code | 8541210075 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 5V1P1 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541210080 |
| Package/Case | TP |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.5 |
| Package Length (mm) | 6.5 |
| Minimum DC Current Gain | 140@100mA@2V |
| Seated Plane Height (mm) | 8.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 2A |
| Maximum Emitter Base Voltage | 6V |
| Maximum Transition Frequency | 150(Typ)MHz |
| Maximum Collector Base Voltage | 60V |
| Maximum Collector-Emitter Voltage | 50V |
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