2SD1802S-TL-E
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 50V, 3A, 150MHz, Low VCE(sat), DPAK
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) in a TO-252-3 (DPAK) package, designed for high-efficiency switching applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 50V. Offers a low collector-emitter saturation voltage of 190µV and a transition frequency of 150MHz. This lead-free, RoHS-compliant component operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1W. Supplied on a 700-piece tape and reel.
| RoHS | Compliant |
| Width | 5.5mm |
| Height | 2.3mm |
| Length | 6.5mm |
| hFE Min | 140 |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-252-3 |
| Max Frequency | 150MHz |
| RoHS Compliant | Yes |
| Package Quantity | 700 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 190uV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
