2SD1949T106R
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NPN BJT Transistor, 50V VCEO, 500mA IC, 250MHz fT, SC Package
Дополнительная информация
NPN silicon bipolar junction transistor for surface mount applications. Features a 50V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 250MHz. Packaged in a compact SC-70, 3-pin surface mount case with lead-free contact plating. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2mm |
| hFE Min | 120 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Max Frequency | 100MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
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