2SD2114KT146W
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NPN BJT Transistor, 20V, 500mA, 350MHz, SC-59 SMD
Дополнительная информация
NPN silicon bipolar junction transistor for surface mount applications. Features a 20V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 820 and a transition frequency of 350MHz. Packaged in a compact SC-59 (3-pin) SMD/SMT case with dimensions of 3mm (length) x 1.8mm (width) x 1.2mm (height). Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.2mm |
| Length | 3mm |
| hFE Min | 820 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Max Frequency | 100MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 20V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 350MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 350MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 12V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 25V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 400mV |
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