2SD2226KT146V
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NPN BJT Transistor, 50V VCEO, 150mA IC, 250MHz, SMT
Дополнительная информация
NPN Silicon Bipolar Junction Transistor for surface mount applications. Features a 50V collector-emitter breakdown voltage and 150mA continuous collector current. Offers a 250MHz transition frequency and a minimum hFE of 820. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. Packaged in SMT3 (SC-59) with copper, tin, and silver contact plating.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 820 |
| Polarity | NPN |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | 150mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 12V |
| Continuous Collector Current | 150mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
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