2SD2652T106
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Краткое описание:
NPN BJT Transistor, 1.5A I(C), 12V V(BR)CEO, SOT-323
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 12V. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 400MHz. Packaged in a 3-pin SC-70 (SOT-323) surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 270 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 12V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Transition Frequency | 400MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 400MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 80mV |
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