2SD2653TL
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NPN BJT Transistor, 2A, 12V, 360MHz, SMT
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 2A continuous collector current and 12V collector-emitter breakdown voltage. Operates with a 360MHz transition frequency and a minimum hFE of 270. Packaged in a TSMT3 (TO-236-3) surface-mount package with 3 pins. Offers a maximum power dissipation of 1W and operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 270 |
| Polarity | NPN |
| Frequency | 360MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 12V |
| Package Quantity | 1 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 360MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 2A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 360MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 2A |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 180mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 90mV |
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