2SD2656T106
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NPN BJT Transistor, 1A, 30V, 400MHz, SC Package
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and 1A Continuous Collector Current (IC). Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 400MHz. Packaged in a compact UMT3 (SC-70) surface-mount package with 3 pins, measuring 2.1mm x 1.35mm x 0.9mm. Operates across a wide temperature range from -55°C to +150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.1mm |
| hFE Min | 270 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Max Frequency | 100MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Transition Frequency | 400MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 400MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 140mV |
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