2SD2673TL
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NPN BJT Transistor, 3A, 30V, 200MHz, SMT
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 30V. Offers a collector-emitter saturation voltage of 120mV and a minimum DC current gain (hFE) of 270. Operates with a transition frequency of 200MHz and a maximum power dissipation of 1W. Packaged in a TSMT3 (TO-236-3) surface-mount package, this RoHS compliant component is suitable for a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 270 |
| Polarity | NPN |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 120mV |
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