2SD2703TL
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 30V, 1A, 320MHz, SMD
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 1A maximum collector current, 30V collector-emitter breakdown voltage, and 120mV collector-emitter saturation voltage. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 320MHz. Packaged in a compact TUMT3 (SMD/SMT) with dimensions of 2.1mm (L) x 1.8mm (W) x 0.82mm (H). Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 0.82mm |
| Length | 2.1mm |
| hFE Min | 270 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 320MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Power Dissipation | 800mW |
| Gain Bandwidth Product | 320MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 120mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
