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Краткое описание:
P-CH MOSFET, 60V, 14A, TO-220, Through Hole
Дополнительная информация
P-channel enhancement mode silicon power MOSFET featuring a 60V maximum drain-source voltage and 14A maximum continuous drain current. This through-hole component is housed in a TO-220NIS package with a 3-pin configuration and tab. It offers a low drain-source on-resistance of 120 mOhm at 10V, with typical gate charge of 45nC and input capacitance of 1200pF. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TO-220NIS |
| AEC Qualified | No |
| Configuration | Single |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.5 |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 45nC |
| Typical Gate Charge @ Vgs | 45@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 120@10VmOhm |
| Typical Input Capacitance @ Vds | 1200@10VpF |
| Maximum Continuous Drain Current | 14A |
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