2SK2037(TE85R,F)

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2SK2037(TE85R,F) - Toshiba
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Краткое описание: N-CH MOSFET 20V 0.1A Si SOT-323 Surface Mount
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode silicon MOSFET for small signal applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. This single-element transistor is housed in a 3-pin USM (SOT-323) surface-mount package, measuring 2mm x 1.25mm x 0.9mm. Maximum power dissipation is 100mW, with an operating temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Jedec SOT-323
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case USM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Width (mm) 1.25
Package Family Name USM
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage 10V
Number of Elements per Chip 1
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance [email protected]mOhm
Typical Input Capacitance @ Vds 14@3VpF
Maximum Continuous Drain Current 0.1A

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