2SK2613(F)
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Краткое описание:
N-CH MOSFET 1kV 8A 1.7R Through Hole
Дополнительная информация
N-channel MOSFET with 1kV drain-source breakdown voltage and 8A continuous drain current. Features 1.7Ω maximum drain-source on-resistance and 4V threshold voltage. Operates across a -55°C to 150°C temperature range with 150W maximum power dissipation. Through-hole mount package with 30ns fall time and 2nF input capacitance. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.8mm |
| Height | 19mm |
| Length | 15.9mm |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.7R |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 2nF |
| Power Dissipation | 150W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.7R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain to Source Breakdown Voltage | 1kV |
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