2SK2717(LBNCN)
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Краткое описание:
N-CH MOSFET 900V 5A TO-220NIS Through Hole Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET, silicon, featuring a maximum drain-source voltage of 900V and a continuous drain current of 5A. This single-element transistor utilizes pi-MOS III process technology and is housed in a TO-220NIS through-hole package with 3 pins and a tab. Key specifications include a maximum drain-source on-resistance of 2500 mOhm at 10V, typical gate charge of 45nC at 10V, and typical input capacitance of 1200pF at 25V. Maximum power dissipation is 45000mW, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220NIS |
| AEC Qualified | No |
| Configuration | Single |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.5 |
| Process Technology | pi-MOS III |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 45nC |
| Typical Gate Charge @ Vgs | 45@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Drain Source Resistance | 2500@10VmOhm |
| Typical Input Capacitance @ Vds | 1200@25VpF |
| Maximum Continuous Drain Current | 5A |
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