2SK2854(TE12L,F)

Производится
2SK2854(TE12L,F) - Toshiba
Краткое описание: N-CH MOSFET 10V 0.5A Si PW-Mini SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Silicon Power MOSFET, surface mountable in a 4-pin PW-Mini (SOT) package. Features a maximum drain-source voltage of 10V and a continuous drain current of 0.5A. Depletion mode operation with a maximum gate threshold voltage of 1.8V. Maximum power dissipation is 500mW, operating temperature range from -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 4
Automotive No
Schedule B 8541210080
Channel Mode Depletion
Channel Type N
Package/Case PW-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Weight (g) 0.05
Package Width (mm) 2.5
Package Family Name SOT
Package Height (mm) 1.6(Max)
Package Length (mm) 4.6(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.6(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 500mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±6V
Number of Elements per Chip 1
Maximum Drain Source Voltage 10V
Maximum Gate Threshold Voltage 1.8V
Maximum Continuous Drain Current 0.5A

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