2SK3565

Производится
2SK3565 - Toshiba
Увеличить
Краткое описание: N-CH MOSFET, 900V, 5A, 2.5R, TO-220
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 900V drain-source breakdown voltage and 5A continuous drain current. This through-hole mounted component offers a low 2.5 ohm drain-source on-resistance and 45W maximum power dissipation. Designed for general-purpose power applications, it operates within a temperature range of -55°C to 150°C and has a gate-source voltage rating of 30V.
RoHS Not CompliantNo
Mount Through Hole
Polarity N-CHANNEL
Fall Time 60ns
Lead Free Contains Lead
Packaging Rail/Tube
Rds On Max 2.5R
Nominal Vgs 4V
Termination Through Hole
Package/Case TO-220-3
Current Rating 5A
RoHS Compliant No
DC Rated Voltage 900V
Package Quantity 50
Input Capacitance 1.15nF
Power Dissipation 45W
Dual Supply Voltage 900V
Radiation Hardening No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.5R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 900V
Drain to Source Breakdown Voltage 900V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.