2SK3566(MDK,Q)
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Краткое описание:
N-CH MOSFET 900V 2.5A TO-220SIS Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 2.5A continuous drain current. This through-hole component utilizes pi-MOS IV process technology and is housed in a TO-220SIS package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 6400 mOhm at 10V, and a maximum power dissipation of 40W. Operating temperature range is -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220SIS |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 1.7 |
| Package Width (mm) | 4.5 |
| Process Technology | pi-MOS IV |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 17 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 12nC |
| Typical Gate Charge @ Vgs | 12@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 6400@10VmOhm |
| Typical Input Capacitance @ Vds | 470@25VpF |
| Maximum Continuous Drain Current | 2.5A |
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