2SK3680-01
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Краткое описание:
Power Field-Effect Transistor, 52A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 52A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
| RoHS | Not Compliant |
| Mount | Through Hole |
| Width | 0.197inch |
| Height | 0.846inch |
| Length | 0.61inch |
| Lead Pitch | 5.45mm |
| Nominal Vgs | 5V |
| Termination | Through Hole |
| Package/Case | TO-247 |
| Polarization | N |
| RoHS Compliant | No |
| Power Dissipation | 600W |
| Turn-On Delay Time | 80ns |
| Dual Supply Voltage | 500V |
| Turn-Off Delay Time | 190ns |
| Max Power Dissipation | 600W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 110mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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