2SK4016(Q)

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2SK4016(Q) - Toshiba
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Краткое описание: 600V 13A N-CH MOSFET TO-220
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET designed for high-voltage applications, featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 13A. This through-hole mounted component offers a low on-resistance of 500mΩ and a maximum power dissipation of 50W, operating across a temperature range of -55°C to 150°C. The TO-220 package facilitates efficient heat dissipation, with a typical gate-source voltage of 4V and a fall time of 50ns.
RoHS Not CompliantNo
Mount Through Hole
Width 4.5mm
Height 8.1mm
Length 10mm
Polarity N-CHANNEL
Fall Time 50ns
Lead Free Lead Free
Packaging Bulk
Rds On Max 500mR
Nominal Vgs 4V
Termination Through Hole
Package/Case TO-220-3
Package Quantity 50
Input Capacitance 3.1nF
Power Dissipation 50W
Number of Elements 1
Dual Supply Voltage 600V
Radiation Hardening No
Max Power Dissipation 50W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 500mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 13A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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