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Краткое описание:
250V 17A PNP Si Power BJT Transistor TO-3P
Дополнительная информация
PNP Silicon Power Transistor, featuring a 250V Collector-Emitter Voltage (VCEO) and a maximum collector current of 17A. This through-hole mounted component offers a power dissipation of 200W and a transition frequency of 25MHz. It operates within a temperature range of -65°C to 150°C and boasts a minimum hFE of 80. The transistor is supplied in a TO-3P package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 18.7mm |
| Length | 15.8mm |
| hFE Min | 80 |
| Polarity | PNP |
| Frequency | 25MHz |
| Packaging | Rail/Tube |
| Termination | Through Hole |
| Max Frequency | 25MHz |
| RoHS Compliant | Yes |
| Package Quantity | 300 |
| Power Dissipation | 200W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 25MHz |
| Max Collector Current | 17A |
| Max Power Dissipation | 200W |
| Gain Bandwidth Product | 25MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 3V |
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