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PNP BJT Transistor, 30V, 1.5A, 100MHz, SOT-23
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a -30V collector-emitter breakdown voltage and a -1.5A maximum collector current. Operates with a 100MHz transition frequency and a minimum hFE of 70. Packaged in a SOT-23 surface-mount case, this RoHS compliant component offers a maximum power dissipation of 500mW and an operating temperature range of -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.95mm |
| Length | 2.9mm |
| hFE Min | 70 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 800mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | -30V |
| Collector Emitter Saturation Voltage | -420mV |
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