AO3419
Производится
Увеличить
Краткое описание:
P-Channel MOSFET, 20V, 3.5A, 85mR, SOT-23
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a 20V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 3.5A. Surface mountable in a TO-236-3 package, this single-element transistor offers a low on-resistance (Rds On Max) of 85mR and a maximum power dissipation of 1.4W. Operating across a temperature range of -55°C to 150°C, it is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 85mR |
| Package/Case | TO-236-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 400pF |
| Power Dissipation | 1.4W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
