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Краткое описание:
N-CH MOSFET 30V 20A 8-Pin SOIC
Дополнительная информация
N-channel enhancement mode power MOSFET in an 8-pin SOIC package. Features a 30V drain-source voltage, 20A continuous drain current, and low 5.8mOhm drain-source resistance at 10V. Surface mountable with gull-wing leads and a 1.27mm pin pitch, this single quad drain triple source transistor offers a maximum power dissipation of 3100mW and operates from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| Jedec | MS-012AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6USE7 |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOIC |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.9 |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.5 |
| Package Length (mm) | 4.9 |
| Seated Plane Height (mm) | 1.65 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 15.5nC |
| Typical Gate Charge @ Vgs | 15.5@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 5.8@10VmOhm |
| Typical Input Capacitance @ Vds | 1037@15VpF |
| Maximum Continuous Drain Current | 20A |
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