AO4612
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Краткое описание:
N/P-Ch MOSFET, 60V, 3.2A, 56mR, SOIC, 2-Element
Дополнительная информация
Dual N-channel and P-channel MOSFET transistor in a SOIC package. Features 60V drain-to-source voltage and 3.2A continuous drain current. Offers a low on-resistance of 56mΩ and 540pF input capacitance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Designed for surface mount applications and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | N and P-Channel |
| Packaging | Cut Tape |
| Rds On Max | 56mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Input Capacitance | 540pF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 60V |
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