AO4629
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Краткое описание:
N/P-Ch JFET, 30V, 5.5A ID, SOIC, 2-Element
Дополнительная информация
Dual N-Channel and P-Channel JFET for small signal applications. Features 30V drain-to-source voltage and 5.5A continuous drain current. Surface-mount SOIC-8 package with 30mΩ maximum on-resistance. Operating temperature range from -55°C to 150°C, with 2W power dissipation. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | N and P-Channel |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 30mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Input Capacitance | 310pF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 30V |
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