AO4813
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Краткое описание:
P-Channel JFET, 30V, 7.1A ID, SOIC-8, 2-Element
Дополнительная информация
P-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, SOIC-8 package, designed for surface mounting. Features a continuous drain current of 7.1A and a drain-to-source voltage of 30V. Offers a gate-to-source voltage of 20V and a low on-resistance (Rds On Max) of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Input capacitance is 1.25nF. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 25mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Input Capacitance | 1.25nF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 30V |
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