AOD2606
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Краткое описание:
N-CH Power MOSFET 60V 46A DPAK TO-252 SM
Дополнительная информация
N-channel enhancement mode power MOSFET in a DPAK (TO-252) surface-mount package. Features a maximum drain-source voltage of 60V and a continuous drain current of 46A. Offers a low drain-source on-resistance of 6.8mΩ at 10V gate-source voltage. The 3-pin package, measuring 6.6mm x 6.1mm x 2.29mm, includes a tab for enhanced thermal performance. Operates across a wide temperature range from -55°C to 175°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Package Width (mm) | 6.1 |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.29 |
| Package Length (mm) | 6.6 |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 53nC |
| Typical Gate Charge @ Vgs | 53@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 6.8@10VmOhm |
| Typical Input Capacitance @ Vds | 4050@30VpF |
| Maximum Continuous Drain Current | 46A |
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