AOD442G
Снят с производства
Краткое описание:
N-Channel Enhancement Mode Field Effect Transistor 60V 38A
Дополнительная информация
The AOD442G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It features a high drain current capability and is designed for efficient power switching.
| RoHS | Compliant |
| Halogen Free | Yes |
| Power Dissipation (Pd) | 60W |
| Input Capacitance (Ciss) | 2300pF |
| Gate-Source Voltage (Vgs) | ±20V |
| Drain-Source Voltage (Vds) | 60V |
| Operating Temperature Range | -55 to 175°C |
| Total Gate Charge (Qg) @ 10V | 68nC |
| Continuous Drain Current (Id) | 38A |
| Drain-Source On-Resistance (Rds On) @ Vgs=10V | 20mΩ |
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