AOD444
Производится
Увеличить
Краткое описание:
60V 12A N-Ch MOSFET, 60mR Rds On, TO-252
Дополнительная информация
N-Channel Power MOSFET, TO-252-3 package, offering 60V drain-to-source voltage and 12A continuous drain current. Features low 60mΩ Rds On, 540pF input capacitance, and 20W maximum power dissipation. Designed for surface mount applications, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C and is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 540pF |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 20W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
