AOD6N50
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Краткое описание:
N-CH MOSFET 500V 5.3A DPAK Surface Mount Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252) surface-mount package. Features a maximum drain-source voltage of 500V and a continuous drain current of 5.3A. Offers a low drain-source on-resistance of 1400mΩ at 10V Vgs. Designed for high power dissipation up to 104W with an operating temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Package Width (mm) | 6.1 |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.29 |
| Package Length (mm) | 6.6 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 104000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 11.5nC |
| Typical Gate Charge @ Vgs | 11.5@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 1400@10VmOhm |
| Typical Input Capacitance @ Vds | 538@25VpF |
| Maximum Continuous Drain Current | 5.3A |
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