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Краткое описание:
P-CH MOSFET 20V 8A 6-Pin DFN-B EP SMT
Дополнительная информация
P-channel enhancement mode power MOSFET in a 6-pin DFN-B EP package, measuring 2mm x 2mm x 0.55mm. Features a maximum drain-source voltage of 20V and a continuous drain current of 8A. Offers a low drain-source on-resistance of 21mOhm at 4.5V gate-source voltage. Designed for surface mounting with a 0.65mm pin pitch. Operates across a temperature range of -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6USE7 |
| Pin Count | 6 |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | DFN-B EP |
| Configuration | Single Quad Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Package Width (mm) | 2 |
| Package Height (mm) | 0.55(Max) |
| Package Length (mm) | 2 |
| Seated Plane Height (mm) | 0.55 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2800mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±8V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 0.9V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 1370@6VpF |
| Maximum Continuous Drain Current | 8A |
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