AON6204
Производится
Увеличить
Краткое описание:
N-CH MOSFET 30V 24A DFN EP 8-Pin SMT
Дополнительная информация
N-channel enhancement mode Power MOSFET featuring 30V drain-source voltage and 24A continuous drain current. This single-element transistor is housed in an 8-pin DFN EP package with a 5.2mm x 5.55mm footprint and 0.95mm maximum height. Key specifications include a low 12mOhm maximum drain-source resistance at 10V and a typical gate charge of 8nC. Surface mountable, it operates across a wide temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6USE7 |
| Pin Count | 8 |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DFN EP |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.55 |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Package Family Name | DFN |
| Package Height (mm) | 0.95(Max) |
| Package Length (mm) | 5.2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.95 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 31000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 8nC |
| Typical Gate Charge @ Vgs | 8@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 12@10VmOhm |
| Typical Input Capacitance @ Vds | 510@15VpF |
| Maximum Continuous Drain Current | 24A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
