AON6290
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Краткое описание:
N-CH MOSFET 100V 85A DFN EP 8-Pin SMT
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 85A continuous drain current. This single MOSFET offers a low 4.6mOhm drain-source resistance at 10V gate-source voltage. Housed in an 8-pin DFN EP package with exposed pad, it supports surface mounting and has a package height of 0.95mm max. Key electrical characteristics include a typical gate charge of 63nC at 10V and input capacitance of 4600pF at 50V. Operating temperature range spans from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6USE7 |
| Pin Count | 8 |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DFN EP |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.55 |
| Process Technology | TMOS |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Package Family Name | DFN |
| Package Height (mm) | 0.95(Max) |
| Package Length (mm) | 5.2 |
| Seated Plane Height (mm) | 0.95 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 208000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 63nC |
| Typical Gate Charge @ Vgs | 63@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 3.4V |
| Maximum Drain Source Resistance | 4.6@10VmOhm |
| Typical Input Capacitance @ Vds | 4600@50VpF |
| Maximum Continuous Drain Current | 85A |
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