AON6816
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Краткое описание:
N-CH MOSFET 30V 16A 8-Pin DFN EP SMT
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 16A continuous drain current. This dual dual drain device is housed in an 8-pin DFN EP package with exposed pad, measuring 5.2mm x 5.55mm x 0.95mm, designed for surface mounting. Key specifications include a low 6.2mOhm drain-source resistance at 10V and a maximum power dissipation of 21000mW, operating across a temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6USE7 |
| Pin Count | 8 |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DFN EP |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.55 |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Package Family Name | DFN |
| Package Height (mm) | 0.95(Max) |
| Package Length (mm) | 5.2 |
| Seated Plane Height (mm) | 0.95 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 21000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 33.4nC |
| Typical Gate Charge @ Vgs | 33.4@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 6.2@10VmOhm |
| Typical Input Capacitance @ Vds | 1540@15VpF |
| Maximum Continuous Drain Current | 16A |
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