AON7428
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Краткое описание:
N-CH MOSFET 30V 50A DFN EP 8-Pin SMT
Дополнительная информация
N-channel enhancement mode power MOSFET, 30V drain-source voltage, 50A continuous drain current. Features 2.8mOhm maximum drain-source resistance at 10V Vgs, with typical gate charge of 49nC at 10V and input capacitance of 2600pF at 15V Vds. Housed in an 8-pin DFN EP package (3.3x3.3x0.75mm) with surface mount configuration. Operates from -55°C to 150°C with 83W maximum power dissipation.
| PCB | 8 |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 6USE7 |
| Pin Count | 8 |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DFN EP |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 3.3 |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Package Family Name | DFN |
| Package Height (mm) | 0.75(Max) |
| Package Length (mm) | 3.3 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 83000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 49nC |
| Typical Gate Charge @ Vgs | 49@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 2.8@10VmOhm |
| Typical Input Capacitance @ Vds | 2600@15VpF |
| Maximum Continuous Drain Current | 50A |
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