AOT10N65
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Краткое описание:
650V 10A N-CH Power MOSFET TO-220
Дополнительная информация
N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 650V and a continuous drain current of 10A. Features a TO-220 package with 3 pins and a tab, designed for through-hole mounting. Offers a low drain-source on-resistance of 1000mΩ at 10V, with a typical gate charge of 27.7nC at 10V. Maximum power dissipation is 250W, operating within a temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Package Width (mm) | 4.45 |
| Package Description | Transistor Outline Package |
| Package Height (mm) | 9.14 |
| Package Length (mm) | 10.03 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.7(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 27.7nC |
| Typical Gate Charge @ Vgs | 27.7@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Drain Source Resistance | 1000@10VmOhm |
| Typical Input Capacitance @ Vds | 1369@25VpF |
| Maximum Continuous Drain Current | 10A |
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