AOT1N60
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Краткое описание:
N-CH MOSFET 600V 1.3A TO-220 Through Hole Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-220 package. Features a maximum drain-source voltage of 600V and a continuous drain current of 1.3A. This single-element transistor offers a low drain-source on-resistance of 9000 mOhm at 10V, with a typical gate charge of 6.1 nC. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Package Width (mm) | 4.45 |
| Package Description | Transistor Outline Package |
| Package Height (mm) | 9.14 |
| Package Length (mm) | 10.03 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.7(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 41700mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 6.1nC |
| Typical Gate Charge @ Vgs | 6.1@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Drain Source Resistance | 9000@10VmOhm |
| Typical Input Capacitance @ Vds | 130@25VpF |
| Maximum Continuous Drain Current | 1.3A |
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