AOT2618L
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Краткое описание:
N-CH MOSFET 60V 7A TO-220 Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-220 package, featuring a 60V drain-source voltage and 7A continuous drain current. This single-element transistor offers a low 19mΩ drain-source resistance at 10V Vgs and a maximum power dissipation of 41.5W. With a 2.5V gate threshold voltage and typical gate charge of 14nC at 10V, it is designed for through-hole mounting. The TO-220 package measures 10.03mm in length, 4.45mm in width, and 9.14mm in height, with a 2.54mm pin pitch.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Package Width (mm) | 4.45 |
| Package Description | Transistor Outline Package |
| Package Height (mm) | 9.14 |
| Package Length (mm) | 10.03 |
| Seated Plane Height (mm) | 19.7(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 41500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 14nC |
| Typical Gate Charge @ Vgs | 14@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 19@10VmOhm |
| Typical Input Capacitance @ Vds | 950@30VpF |
| Maximum Continuous Drain Current | 7A |
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