AOT27S60L
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600V 27A N-Ch MOSFET, TO-220, 160mR RdsOn
Дополнительная информация
N-Channel Power MOSFET, Metal-Oxide-Semiconductor FET, featuring a 600V Drain-to-Source Voltage (Vdss) and 27A Continuous Drain Current (ID). This through-hole component, housed in a TO-220 package, offers a low Rds On Max of 160mR and a maximum power dissipation of 357W. It operates across a wide temperature range from -55°C to 150°C, with an input capacitance of 1.294nF. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | aMOS™ |
| Packaging | Rail/Tube |
| Rds On Max | 160mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 1.294nF |
| Power Dissipation | 357W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 357W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 600V |
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