AOT7N70
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Краткое описание:
N-CH MOSFET 700V 7A TO-220 Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 700V drain-source voltage and 7A continuous drain current. This single-element transistor is housed in a TO-220 package with 3 pins and a tab, designed for through-hole mounting. Key electrical characteristics include a maximum drain-source on-resistance of 1800mΩ at 10V, a typical gate charge of 20.5nC at 10V, and a typical input capacitance of 978pF at 25V. Maximum power dissipation reaches 198W, with an operating temperature range from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 6USE7 |
| Pin Count | 3 |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Package Width (mm) | 4.45 |
| Package Description | Transistor Outline Package |
| Package Height (mm) | 9.14 |
| Package Length (mm) | 10.03 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.7(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 198000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 20.5nC |
| Typical Gate Charge @ Vgs | 20.5@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 700V |
| Maximum Drain Source Resistance | 1800@10VmOhm |
| Typical Input Capacitance @ Vds | 978@25VpF |
| Maximum Continuous Drain Current | 7A |
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